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Proceedings Paper

Surface modification of sapphire by ion implantation
Author(s): Carl J. McHargue
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Paper Abstract

The range of microstructures and properties of sapphire that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be 'amorphous', perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into 'pure' metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy, optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

Paper Details

Date Published: 17 September 1998
PDF: 12 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321960
Show Author Affiliations
Carl J. McHargue, Univ. of Tennessee/Knoxville (United States)

Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

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