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Proceedings Paper

Electrical and optical behavior of ion-implanted and ion-beam mixed polymers
Author(s): Ryan E. Giedd; Darcie L. Dennis; Jason A. Plumoff; Yongqiang Wang
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Paper Abstract

A series of polystyrene (PS) and polymethylmethacrylate (PMMA) materials were implanted with 50 keV nitrogen ions to a dose in the range of 1-8 X 1015 to determine optical losses in the visible range. The transmission results indicate a minimum at about 350 nm for both the PS and PMMA materials, in agreement with previous experiments. This minimum changes in amplitude and shifts to longer wavelengths with increasing dose. A similar minimum is observed in 1000A sputter deposited C films on PS and PMMA substrates. However, the density of scattering centers responsible for the minimum, is higher in the implanted materials than in the carbon sputtered materials. The electrical and to some extent, the optical, properties of ion implanted polymers are unstable. By truncating the microstructure, toward the mean range of the implant ion, the electrical resistivity can be stabilized to about a 3 percent change per year. To further reduce this stability problem, we ion beam mixed 200-500A metallic films on polytetrafloroethlene. The resulting polymer/metallic composite has a highly conductive layer slightly below the surface and is bonded securely to the polymer substrate. Ion beam analysis result suggest that by this method we can produce metallic layers under the surface of the polymer.

Paper Details

Date Published: 17 September 1998
PDF: 10 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321955
Show Author Affiliations
Ryan E. Giedd, Southwest Missouri State Univ. (United States)
Darcie L. Dennis, Southwest Missouri State Univ. (United States)
Jason A. Plumoff, Southwest Missouri State Univ. (United States)
Yongqiang Wang, Univ. of Minnesota/Twin Cities (United States)


Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

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