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Proceedings Paper

MeV ion implantation for modification of electronic, optical, and magnetic materials
Author(s): Sjoerd Roorda; Francois Schiettekatte; M. Cai; T. Veres; Anna Tchebotareva
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Paper Abstract

The University of Montreal recently inaugurated a new 1.7 MV Tandem accelerator for materials research. It is being used to study a wide range of topics involving optical, electronic, opto-electronic, and magnetic materials. Current research includes: threshold dose for secondary damage in Si, gettering of impurities in Si by nano-cavities, ion beam mixing of metallic multilayers probed by giant magnetoresistance, tracks and deformations induced by multi- MeV ion beams, and high-resolution radial distribution function of pure amorphous silicon. A selection of recent results is discussed.

Paper Details

Date Published: 17 September 1998
PDF: 9 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321945
Show Author Affiliations
Sjoerd Roorda, Univ. de Montreal (Canada)
Francois Schiettekatte, Univ. de Montreal (Canada)
M. Cai, Univ. de Montreal (Canada)
T. Veres, Univ. de Montreal (Canada)
Anna Tchebotareva, Univ. de Montreal (Canada)

Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

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