Share Email Print
cover

Proceedings Paper

Photonic integrated circuits fabricated using quantum well intermixing
Author(s): N. Sylvain Charbonneau; Andre Delage; Joan E. Haysom; Fang Yang; Philip J. Poole; Geof C. Aers; Jian Jun He; Emil S. Koteles; Paul Garrett Piva; Todd W. Simpson; Ian V. Mitchell
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A technique, base don quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing, these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 10 nm at 1.55 micrometers in InGaAs/InGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, post-growth processing step. The performance of both passive and active devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Paper Details

Date Published: 17 September 1998
PDF: 12 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321940
Show Author Affiliations
N. Sylvain Charbonneau, National Research Council Canada (Canada)
Andre Delage, National Research Council Canada (Canada)
Joan E. Haysom, National Research Council Canada (Canada)
Fang Yang, National Research Council Canada (United States)
Philip J. Poole, National Research Council Canada (Canada)
Geof C. Aers, National Research Council Canada (Canada)
Jian Jun He, National Research Council Canada (Canada)
Emil S. Koteles, National Research Council Canada (Canada)
Paul Garrett Piva, Univ. of Western Ontario (Canada)
Todd W. Simpson, Univ. of Western Ontario (Canada)
Ian V. Mitchell, Univ. of Western Ontario (Canada)


Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

© SPIE. Terms of Use
Back to Top