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Proceedings Paper

Novel CMOS readout techniques for uncooled pyroelectric IR FPA
Author(s): Tai Ping Sun; Yuan Lung Chin; Wen Yaw Chung; Shen Kan Hsiung; Jung Chuan Chou
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Paper Abstract

Based on the application of the source follower per detector (SFD) input biasing technique, a new redout structure for the IR focal-plane-array (FPA), called the variable gain source follower per detector (VGSFD) is proposed and analyzed. The readout circuit of VGSFD of a unit cell of pyroelectric sensor under investigation, is composed of a source follower per detector circuit, high gain amplifier, and the reset switch. The VGSFD readout chip has been designed in 0.5 micrometers double-poly-double-metal n-well CMOS technology in various formats from 8 by 8 to 128 by 128. The experimental 8 by 8 VGSFD measurement results of the fabricated readout chip at room temperature have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 by 50 micrometers 2 pixel size.

Paper Details

Date Published: 14 September 1998
PDF: 12 pages
Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); doi: 10.1117/12.321763
Show Author Affiliations
Tai Ping Sun, Chung-Yu Junior College of Business and Administration (Taiwan)
Yuan Lung Chin, Chung Yuan Christian Univ. (Taiwan)
Wen Yaw Chung, Chung Yuan Christian Univ. (Taiwan)
Shen Kan Hsiung, Chung Yuan Christian Univ. (Taiwan)
Jung Chuan Chou, National Yunlin Institute of Technology (Taiwan)

Published in SPIE Proceedings Vol. 3360:
Infrared Readout Electronics IV
Bedabrata Pain; Terrence S. Lomheim, Editor(s)

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