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Proceedings Paper

Recent advances in GaAs JFETs for deep cryogenic focal plane readouts
Author(s): Thomas J. Cunningham; Michael Fitzsimmons
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Paper Abstract

The progress of the JPL in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in RI readout electronics operating below 10 Kelvin is discussed. Results on GaAs JFETs fabricated using a highly isotropic HF-based etchant have been presented previously by our group. The isotropic etch reduced the typical input leakage current at 4K to less than 1 fA. These JFETs had a low frequency noise of just under 1 (mu) V/Hz1/2 at 1 Hz at 4K, while dissipating less than 1 (mu) W of power. Building on this work, we have fabricated small-scale integrated circuits based on this GaAs JFET technology. In this paper we report on the fabrication of small-scale integrated circuit multiplexers and amplifiers. An 8 by 1 source-follower-per-detector multiplexer and a three-transistor differential pair have been fabricated and are fully functional at 4K. The input-referred noise and leakage current is consistent with that for the discrete devices. A systematic study of the device size dependence of the noise has been started, but as yet is inconclusive.

Paper Details

Date Published: 14 September 1998
PDF: 5 pages
Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); doi: 10.1117/12.321754
Show Author Affiliations
Thomas J. Cunningham, Jet Propulsion Lab. (United States)
Michael Fitzsimmons, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 3360:
Infrared Readout Electronics IV
Bedabrata Pain; Terrence S. Lomheim, Editor(s)

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