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Proceedings Paper

High-energy-per-pulse excimer laser for silicon annealing
Author(s): Bruno Godard; Dorian Zahorski
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Paper Abstract

Forty-five joule per pulse XeCl laser with good homogeneity (plus or minus 1%) and repeatability (plus or minus 1%) allow to increase the quality and decrease the cost of annealing of amorphous Silicon compared to Solid Phase Crystallization and Scanning Excimer Laser Annealing.

Paper Details

Date Published: 14 September 1998
PDF: 8 pages
Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); doi: 10.1117/12.321588
Show Author Affiliations
Bruno Godard, SOPRA SA (France)
Dorian Zahorski, SOPRA SA (France)


Published in SPIE Proceedings Vol. 3343:
High-Power Laser Ablation
Claude R. Phipps, Editor(s)

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