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Proceedings Paper

Pulsed-CO2-laser-induced damage mechanisms in semiconductors
Author(s): Sebastian Lefranc; Michel L. Autric
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Paper Abstract

Laser irradiation induced damage to several materials of interest for use as 10.6 micrometer laser system windows and lenses is investigated in this paper. The irradiation source in these single shot experiments was a pulsed TEA CO2 laser (lambda equals 10.6 micrometer, (tau) pulse equals 3.5 microsecond, I equals 1 - 100 MW/cm2 onto the sample). A time resolved study of the damage process in semiconductors (Ge, ZnSe, ZnS) has been carried out during the interaction by measuring the variation of the transmitted and reflected intensity of a CO2 cw laser through the samples. An analysis of the pulse shape dependence on the damage parameters has been investigated. Results show that damages are initiated by the high power peak of the laser pulse on both surfaces and in the bulk of the materials. The damaged materials have been characterized for various incident fluences by means of optical microscopy and scanning electron microscopy in terms of morphology.

Paper Details

Date Published: 14 September 1998
PDF: 12 pages
Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); doi: 10.1117/12.321543
Show Author Affiliations
Sebastian Lefranc, IRPHE/Univ. Marseille (France)
Michel L. Autric, IRPHE/Univ. Marseille (France)


Published in SPIE Proceedings Vol. 3343:
High-Power Laser Ablation
Claude R. Phipps, Editor(s)

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