Proceedings PaperTwo-step ablation for CVD SiO2 film by ArF excimer laser
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In LSI restructuring systems which use lasers, via-hole formations are conducted by using laser ablation. In transparent films it is difficult to make a hole without causing damages on underlying interconnections, because laser ablation using visible wavelengths overheats the underlying metals. This paper propose two-step ablation method for transparent films, that is consist of absorption layer formation process and ablation process. Ablations of SiO2 on aluminum interconnections were achieved using this two-step ablation process, without damage appeared as thermal expansion or resistance increase.