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Proceedings Paper

Two-step ablation for CVD SiO2 film by ArF excimer laser
Author(s): Yuko Seki
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Paper Abstract

In LSI restructuring systems which use lasers, via-hole formations are conducted by using laser ablation. In transparent films it is difficult to make a hole without causing damages on underlying interconnections, because laser ablation using visible wavelengths overheats the underlying metals. This paper propose two-step ablation method for transparent films, that is consist of absorption layer formation process and ablation process. Ablations of SiO2 on aluminum interconnections were achieved using this two-step ablation process, without damage appeared as thermal expansion or resistance increase.

Paper Details

Date Published: 14 September 1998
PDF: 12 pages
Proc. SPIE 3343, High-Power Laser Ablation, (14 September 1998); doi: 10.1117/12.321537
Show Author Affiliations
Yuko Seki, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3343:
High-Power Laser Ablation
Claude R. Phipps, Editor(s)

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