Share Email Print

Proceedings Paper

Dielectric properties of sol-gel TiO2(La) films
Author(s): Mariuca Gartner; Constanta Parlog; Anna M. Szekeres; S. S. Simeonov; E. Kafedjiiska; Toma Stoica
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High dielectric TiO2(La) films deposited on the silicon waves by the sol-gel technique have been characterized by Spectroscopic Ellipsometry, Fourier Transformed Infrared Spectroscopy. Rutherford Backscattering Spectroscopy and electrical measurements. The microstructural, optical and electrical properties exhibit a strong dependence on the introduced lanthanum quality. For La/Ti > 0.1 all film properties are abruptly changed closer to that of pure lanthanum oxide.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); doi: 10.1117/12.321014
Show Author Affiliations
Mariuca Gartner, Institute of Physical Chemistry (Romania)
Constanta Parlog, Institute of Physical Chemistry (Romania)
Anna M. Szekeres, Institute of Solid State Physics (Bulgaria)
S. S. Simeonov, Institute of Solid State Physics (Bulgaria)
E. Kafedjiiska, Institute of Solid State Physics (Bulgaria)
Toma Stoica, National Institute of Material Physics (Germany)

Published in SPIE Proceedings Vol. 3573:
OPTIKA '98: 5th Congress on Modern Optics
Gyorgy Akos; Gabor Lupkovics; Andras Podmaniczky, Editor(s)

© SPIE. Terms of Use
Back to Top