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Proceedings Paper

Nickel deposition on silicon surfaces
Author(s): Cs. Beleznai; Laszlo Nanai; Seppo Leppaevuori; Janne Remes; Hannu Moilanen; Thomas F. George
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Paper Abstract

Experimental results of laser assisted chemical vapor deposition of nickel from Ni(CO)4 and theoretical treatment of deposition process are presented. The nickel deposition has ben realized by scanning of Ar+ laser beam (100 - 400 mW, (lambda) equals 515 nm and 488 nm) on Si surfaces in atmosphere of Ni(CO)4 with 0.2 - 2.0 mbars with scanning speeds of 20 - 700 micrometers /s. As a result homogeneous Ni lines on Si have been deposited with a typical volumetric growth rate of 250 micrometers 3/s and widths of 10 - 20 micrometers and thickness of 0.2 - 0.5 micrometers . The electrical resistivity of lines deposited was cca 7 (mu) (Omega) cm. The theoretical treatment includes computations of the temperature distribution in both gas- phase and solid substrate. The reaction rate is computed on base of local concentration and local temperatures, within the frame of finite element methods using triangles as a base of computing.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); doi: 10.1117/12.320989
Show Author Affiliations
Cs. Beleznai, JATE Univ. (Hungary)
Laszlo Nanai, JATE Univ. (Hungary)
Seppo Leppaevuori, Univ. of Oulu (Finland)
Janne Remes, Univ. of Oulu (Finland)
Hannu Moilanen, Univ. of Oulu (Finland)
Thomas F. George, Univ. of Wisconsin/Stevens Point (United States)


Published in SPIE Proceedings Vol. 3573:
OPTIKA '98: 5th Congress on Modern Optics
Gyorgy Akos; Gabor Lupkovics; Andras Podmaniczky, Editor(s)

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