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Proceedings Paper

Relaation of photodarkening in SiO-As2S3 composite layers
Author(s): Ivan Z. Indutnyi; Peter E. Shepeliavii
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Paper Abstract

Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), (Delta) Eg, of As2S3 nanoparticles embedded into the SiO matrix. As compared to continuous films, the remarkable (Delta) Eg increase (up to 4 times) with decreasing of As2S3 particle sizes was revealed. The exponential dependence of (Delta) Eg on storing time at different temperatures has been obtained. An activation energy of the transition of As2S3 nanoparticles structure from metastable, photoexposed state to ground, annealed state is equal 0.78 +/- 0.06 eV. The effects are related to a space confinement of the photoexcited carrier diffusion length and influence of particle sizes on the intermediate-range order scale structure relaxation in the As2S3 nanoparticles.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); doi: 10.1117/12.320954
Show Author Affiliations
Ivan Z. Indutnyi, Institute of Semiconductor Physics (Ukraine)
Peter E. Shepeliavii, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3573:
OPTIKA '98: 5th Congress on Modern Optics
Gyorgy Akos; Gabor Lupkovics; Andras Podmaniczky, Editor(s)

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