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Proceedings Paper

High-brightness AlGaInP orange light-emitting diodes
Author(s): Yuzhang Li; Guohong Wang; Xiaoyu Ma; Huaide Peng; Shutang Wang; Lianhui Chen
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Paper Abstract

Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 micrometers Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20 mA the LEDs emitting wavelength was between 600 - 610 nm with 18.3 nm FWHM, 0.45 mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degree(s) viewing angle (2(theta) 1/2) reached 30 mcd and 1000 mcd respectively.

Paper Details

Date Published: 18 August 1998
PDF: 3 pages
Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319695
Show Author Affiliations
Yuzhang Li, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Huaide Peng, Institute of Semiconductors (China)
Shutang Wang, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3560:
Display Devices and Systems II
Shou-Qian Ding; Bao Gang Wu, Editor(s)

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