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Proceedings Paper

Field-emission characteristics of diamond films deposited by microwave plasma chemical vapor deposition
Author(s): Hong Ji; Zengsun Jin; Changzhi Gu; Xianyi Lu; Guangtian Zhou; Guang Yuan; Weibiao Wang
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Paper Abstract

We have studied the field emission characteristics of diamond films. The diamond films were deposited on mirror- polished silicon substrates by bias enhanced nucleation microwave plasma chemical vapor deposition technique. The nucleation density and surface morphological properties were analyzed by means of SEM. The field emission characteristics of diamond films nucleated on different bias conditions were studied by measuring emission current versus voltage curves (I-V plots). The diamond film has small grain sizes and high nucleation density when bias value is high, it has low turn- on voltage. The diamond film nucleated on higher methane concentration has also low turn-on voltage and its emission current increases rapidly as voltage increases.

Paper Details

Date Published: 18 August 1998
PDF: 3 pages
Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319667
Show Author Affiliations
Hong Ji, Jilin Univ. (China)
Zengsun Jin, Jilin Univ. (China)
Changzhi Gu, Jilin Univ. (China)
Xianyi Lu, Jilin Univ. (China)
Guangtian Zhou, Jilin Univ. (China)
Guang Yuan, Changchun Institute of Physics (China)
Weibiao Wang, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 3560:
Display Devices and Systems II
Shou-Qian Ding; Bao Gang Wu, Editor(s)

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