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Proceedings Paper

Polycrystalline silicon porous silicon field emitter
Author(s): Weibiao Wang; Changchun Jin; Jinxiu Jiang; Haifeng Zhao; Xiwu Fan
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Paper Abstract

In this research, we applied the physical and chemical characteristics of porous polysilicon to field emission. Porous polysilicon field emitter was fabricated by anodized, oxide, et al technology. Au film about 10 mm thickness as grid was used in device. Electron's emission property of device was measured in ultrahigh vacuum chamber. Also, the oxide time as effect factor to emission property was studied.

Paper Details

Date Published: 18 August 1998
PDF: 3 pages
Proc. SPIE 3560, Display Devices and Systems II, (18 August 1998); doi: 10.1117/12.319664
Show Author Affiliations
Weibiao Wang, Changchun Institute of Physics (China)
Changchun Jin, Changchun Institute of Physics (China)
Jinxiu Jiang, Changchun Institute of Physics (China)
Haifeng Zhao, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 3560:
Display Devices and Systems II
Shou-Qian Ding; Bao Gang Wu, Editor(s)

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