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Proceedings Paper

808-nm high-power semiconductor laser arrays
Author(s): Baoshun Zhang; Yi Qu; Xin Gao; Baoxue Bo; Xingde Zhang
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Paper Abstract

In this paper, we adopted GaAlAs/GaAs SCH single quantum well wafer, which is grown by MBE, to complete one centimeter monolithic laser arrays, and two array structures were carried out on purpose to obtain cw and quasi-sw laser output respectively. In the experiment, by means of twice photoetching and chemical etching methods were used to isolate active regions to prevent photons from passing from one to another and amplified spontaneous emission. Results were presented for arrays which reach a maximum cw output power of 7 W perfacet and 50 W (200 microsecond(s) , 50 Hz) quasi-sw output, with lasing wavelength 806 - 810 nm.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319653
Show Author Affiliations
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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