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Proceedings Paper

High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
Author(s): ZunTu Xu; Guowen Yang; Tao Yin; Peng Lian; Bingchen Li; Jingming Zhang; Guo Gao; Junying Xu; Lianhui Chen; Guangdi Shen
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Paper Abstract

For the first time, we report on the 980 nm InGaAs/GaAs/AlGaAs strained quantum well lasers with window structure in regions near the laser facet fabricated by impurity-free vacancy diffusion for quantum well intermixing. In the fabricating procedure, SrF2 was used as a film suppressing the quantum well intermixing. 3 micrometers - stripe ridge waveguide lasers with window region of 25 micrometers at each end exhibit a high slope efficiency of 0.8 W/A and a threshold current of 20 mA. The characteristics are comparable with that of conventional lasers. Catastrophic optical mirror damage is not observed at thermal limited powers as high as 360 mW. Accelerated lifetesting at 100 mW and 50 degree(s)C shows devices to have good reliability.

Paper Details

Date Published: 19 August 1998
PDF: 7 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319652
Show Author Affiliations
ZunTu Xu, Beijing Polytechnic Univ. (China)
Guowen Yang, Institute of Semiconductors (United States)
Tao Yin, Beijing Polytechnic Univ. (Canada)
Peng Lian, Beijing Polytechnic Univ. (China)
Bingchen Li, Institute of Semiconductors (China)
Jingming Zhang, Institute of Semiconductors (China)
Guo Gao, Beijing Polytechnic Univ. (China)
Junying Xu, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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