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Proceedings Paper

High-speed quantum well and quantum dot lasers
Author(s): Pallab Bhattacharya; Xiangkun Zhang; Kishore K. Kamath; David Klotzkin; Jamie D. Phillips; Catherine Caneau; Rajaram J. Bhat
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Paper Abstract

The characteristics of high-speed quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 micrometers (48 GHz) and 1.55 micrometers (26 GHz) by tunneling electrons directly into the lasing subband. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to approximately 7 GHz at room temperature and 23 GHz at 80 K.

Paper Details

Date Published: 19 August 1998
PDF: 11 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319650
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Xiangkun Zhang, TRW (United States)
Kishore K. Kamath, TRW (United States)
David Klotzkin, Univ. of Michigan (United States)
Jamie D. Phillips, Univ. of Michigan (United States)
Catherine Caneau, Corning, Inc. (United States)
Rajaram J. Bhat, Corning, Inc. (United States)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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