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Proceedings Paper

High quantum efficiency InAs/GaInSb/AlSb interband cascade lasers
Author(s): Bao Hua Yang; Rui Q. Yang; Dongxu Zhang; C.H. Thompson Lin; Shin Shem Pei
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Paper Abstract

We proposed and demonstrated a new type of quantum cascade laser based on interband transitions in InAs/GaInSb/AlSb type-II quantum wells. Contrary to the conventional heterostructure or quantum well lasers, this device takes advantage of recycling carriers from valence band back to conduction band for sequential photon emissions to achieve high quantum efficiency. So far, an external differential quantum efficiency exceeding 200% has been observed from 4- micrometers lasers under 1 microsecond(s) pulses and 0.1% duty cycle at 80 K. Under 5 - 10 microsecond(s) pulse lengths and 10% duty cycle, peak powers > 160 mW have been obtained, the corresponding internal quantum efficiency was deduced to be 220%.

Paper Details

Date Published: 19 August 1998
PDF: 9 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319647
Show Author Affiliations
Bao Hua Yang, Univ. of Houston (United States)
Rui Q. Yang, Univ. of Houston (United States)
Dongxu Zhang, Univ. of Houston (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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