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Proceedings Paper

Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition
Author(s): Tao Yin; Peng Lian; ZunTu Xu; Changhua Chen; Hongdong Zhao; Deshu Zou; Jianxing Chen; Guo Gao; Jinyu Du; Changbao Tao; Guangdi Shen; Hui Lu; Lianxi Zheng; Lianhui Chen
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Paper Abstract

Graded-index separate-confinement strained quantum well InGaAs/GaAs/GaAlAs lasers grown by metalorganic chemical- vapor deposition with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 micrometers long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).

Paper Details

Date Published: 19 August 1998
PDF: 6 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319646
Show Author Affiliations
Tao Yin, Beijing Polytechnic Univ. (Canada)
Peng Lian, Beijing Polytechnic Univ. (China)
ZunTu Xu, Beijing Polytechnic Univ. (China)
Changhua Chen, Beijing Polytechnic Univ. (China)
Hongdong Zhao, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)
Jianxing Chen, Beijing Polytechnic Univ. (China)
Guo Gao, Beijing Polytechnic Univ. (China)
Jinyu Du, Beijing Polytechnic Univ. (China)
Changbao Tao, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Hui Lu, Institute of Semiconductors (China)
Lianxi Zheng, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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