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Proceedings Paper

Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2 dielectric cap
Author(s): Lye Huat Lee; Boon Siew Ooi; Yee Loy Lam; Yuen Chuen Chan; Chan Hin Kam
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Paper Abstract

Intermixing of quantum confined heterostructures, or quantum well intermixing (QWI), is an attractive alternative to regrowth and overgrowth techniques for realizing photonic and optoelectronic integrated circuits. Impurity free vacancy diffusion using SiO2 dielectric cap is one of the promising QWI techniques. Silicon dioxide is known to induce outdiffusion of Ga and generate vacancies in GaAs- AlGaAs material during annealing. These vacancies, generated on the group-III sublattice, can be used to promote the diffusion of Al into a buried quantum well (QW) and the diffusion of Ga into the barriers and hence shift the QW band gap to higher energy by partially intermixed the quantum well.

Paper Details

Date Published: 19 August 1998
PDF: 5 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319645
Show Author Affiliations
Lye Huat Lee, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Chan Hin Kam, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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