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Proceedings Paper

Design of semiconductor microcavity emitters and detectors for optical memory and interconnect systems
Author(s): James A. Lott
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Paper Abstract

This paper presents a numerical design study of monolithically integrated microcavity detecting and emitting devices for applications in optical memory and interconnect systems. Combinations of 650 nm AlGaInP/AlGaAs resonant cavity light-emitting diodes and vertical cavity surface emitting lasers are examined. The device structures include resonant cavity p-i-n photodetectors embedded within distributed Bragg reflector mirrors. The photodetectors consist of an undoped quantum well absorbing layer positioned at an antinode of the resonant standing wave. Classical spontaneous and stimulated emission intracavity absorption models are developed to estimate the embedded photodetector spectral responsivity. This embedded photodetector configuration provides an effective means for studying the spontaneous and stimulated emission components of microcavity light emitting devices.

Paper Details

Date Published: 19 August 1998
PDF: 11 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319637
Show Author Affiliations
James A. Lott, Air Force Institute of Technology (United States)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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