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Proceedings Paper

Novel surface-sensitive diode lasers for chemical detection
Author(s): K. Peter Lo; Howard P. Groger; Shufang Luo; Russell J. Churchill
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Paper Abstract

A novel near-infrared diode laser having sensitivity to change of absorption and refractive index at its surface- sensitive region is presented. This semiconductor laser utilizes an AlGaAs single quantum well structure emitting at a wavelength of 950 nm, and its dimensions are 1 mm X 0.5 mm X 0.2 mm. One of the cladding layers is thinned such that the evanescent wave in the quantum well interacts with a surface-sensitive region on the laser. A theoretical model of laser sensitivity toward changes in absorption of a dye- doped polymer coating is formulated. Experimental data using the surface-sensitive diode laser for sensing ammonia and adsorbed monolayers of molecular films are presented. The output power, threshold current and wavelength are shown to be affected by the changes in the adsorbed coating.

Paper Details

Date Published: 19 August 1998
PDF: 8 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319635
Show Author Affiliations
K. Peter Lo, American Research Corp. of Virginia (United States)
Howard P. Groger, American Research Corp. of Virginia (United States)
Shufang Luo, American Research Corp. of Virginia (United States)
Russell J. Churchill, American Research Corp. of Virginia (United States)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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