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Proceedings Paper

Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes
Author(s): D. R. Pendse; Aland K. Chin; Ferdynand P. Dabkowski; Edward M. Clausen Jr.
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Paper Abstract

Aluminum-free laser diodes are InGaAsP/GaAs devices whose epitaxial layers do not contain aluminum. Studies comparing the GaAslAs/GaAs and InGaAsP/GaAs high power laser diodes allegedly indicate that aluminum-free lasers are more reliable due to a reduction of dark-line defects, sudden failures, and gradual degradation. The improved reliability of aluminum-free lasers is presumed to result from the elimination of oxidation of the aluminum-containing epitaxial layers of the laser facets. In this presentation, the performance and reliability of GaAlAs/GaAs and InGaAsP/GaAs high power laser diodes will be reviewed and compared. The present data shows that high reliable GaAlAs/GaAs lasers can be produced with good manufacturing practices.

Paper Details

Date Published: 19 August 1998
PDF: 7 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319633
Show Author Affiliations
D. R. Pendse, Polaroid Corp. (United States)
Aland K. Chin, Polaroid Corp. (United States)
Ferdynand P. Dabkowski, Polaroid Corp. (United States)
Edward M. Clausen Jr., Polaroid Corp. (United States)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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