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Proceedings Paper

Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator
Author(s): Chi Wu; Sam A. Keo; X. Steve Yao; Tasha E. Turner; Lawrence J. Davis; Martin G. Young; Lute Maleki; Siamak Forouhar
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Paper Abstract

The microwave optoelectronic oscillator (OEO) has been demonstrated on a breadboard. The future trend is to integrate the whole OEO on a chip, which requires the development of high power and high efficiency integrated photonic components. In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material. The best devices have threshold currents of 50-mA at room temperature for CW operation. The device length is approximately 3-mm, resulting in a mode spacing of 14 GHz. For only 5-dBm microwave power applied to the modulator section, modulation response with 30 dB resonate enhancement has been observed. This work shows the promise for an on-chip integrated OEO.

Paper Details

Date Published: 19 August 1998
PDF: 10 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319632
Show Author Affiliations
Chi Wu, Jet Propulsion Lab. (United States)
Sam A. Keo, Jet Propulsion Lab. (United States)
X. Steve Yao, Jet Propulsion Lab. (United States)
Tasha E. Turner, Jet Propulsion Lab. (United States)
Lawrence J. Davis, Jet Propulsion Lab. (United States)
Martin G. Young, Jet Propulsion Lab. (United States)
Lute Maleki, Jet Propulsion Lab. (United States)
Siamak Forouhar, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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