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Proceedings Paper

Using ray method to study three-electrode semiconductor lasers
Author(s): Hongxia Sun; Hongchang Lu
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Paper Abstract

Three-section semiconductor lasers are studied based on the ray method. An analytic expression of output power for the three-section semiconductor laser is derived. From this expression, threshold condition is also obtained. The relation between three-electrode semiconductor lasers and two-electrode semiconductor lasers is discussed.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319627
Show Author Affiliations
Hongxia Sun, Southwest Jiaotong Univ. (China)
Hongchang Lu, Southwest Jiaotong Univ. (China)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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