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Proceedings Paper

Novel photonic device structures by using thermal rapid annealing-induced disordering
Author(s): Yi Luo; Zhi-Biao Hao; Changzheng Sun; Ai-Qing Jiang
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Paper Abstract

Experimental results of disordering GaAlAs/GaAs MQW under different rapid thermal annealing (RTA) conditions are presented and discussed. Two kinds of novel device structures based on such technique are then proposed and fabricated. First, a laser diode with window regions for high power operation is designed and fabricated. The maximum output power of such a device shows an increase by 18% over laser diodes without window regions. Then a transverse mode controlled laser structure realized using RTA technique. A stable single transverse mode operation is obtained up to 4 times the threshold current.

Paper Details

Date Published: 19 August 1998
PDF: 8 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319625
Show Author Affiliations
Yi Luo, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Ai-Qing Jiang, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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