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Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices
Author(s): Dongsheng Mao; Manqing Tan; Lianhui Chen
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Paper Abstract

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices, and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property, optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implantation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N2/O2/Ar gas flow rate.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319623
Show Author Affiliations
Dongsheng Mao, Institute of Semiconductors (China)
Manqing Tan, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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