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Proceedings Paper

High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices
Author(s): Peng Lian; Tao Yin; ZunTu Xu; Hongdong Zhao; Deshu Zou; Guo Gao; Jinyu Du; Changhua Chen; Changbao Tao; Jianxing Chen; Guangdi Shen; Qing Cao; Xiaoyu Ma; Lianhui Chen
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Paper Abstract

Liquid carbon tetrachloride (CCl4) was used as dopants for the growth of p-type GaAs and AlGaAs materials by low pressure metalorganic chemical vapor phase deposition. Heavily carbon doped (1.9 X 1020 cm-3) GaAs and high quality p-type Al0.3Ga0.7As materials were obtained. Several key growth parameters, such as growth temperature (560 degree(s)C - 725 degree(s)C), V/III ration (20 - 150) and CCl4 molecular flow (10-7 mol/min- 10-5 mol/min), were changed to investigate their influence on doping efficiency, growth rate and material properties. Electrochemistry capacity-voltage, Hall effect and photoluminescence methods were adopted to measure the electrical and optical properties. X ray double crystal diffraction method was used to study the relationships of carbon doping level and crystal lattice constant of epitaxial layers. On the basis of these research, carbon doped GaAs tunnel diode and high power GaAs/AlGaAs/InGaAs strain quantum well semiconductor laser structures were grown to qualify the carbon doped GaAs/AlGaAs materials comprehensively.

Paper Details

Date Published: 19 August 1998
PDF: 7 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319617
Show Author Affiliations
Peng Lian, Beijing Polytechnic Univ. (China)
Tao Yin, Beijing Polytechnic Univ. (Canada)
ZunTu Xu, Beijing Polytechnic Univ. (China)
Hongdong Zhao, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)
Guo Gao, Beijing Polytechnic Univ. (China)
Jinyu Du, Beijing Polytechnic Univ. (China)
Changhua Chen, Beijing Polytechnic Univ. (China)
Changbao Tao, Beijing Polytechnic Univ. (China)
Jianxing Chen, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Qing Cao, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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