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Proceedings Paper

High-performance 155-nm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
Author(s): Xiaoyu Ma; Qing Cao; Shutang Wang; Liang Guo; Zhongming Wang; Liming Wang; Guangping He; Yali Yang; Hongqin Zhang; Xiuning Zhou; Lianhui Chen
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Paper Abstract

High performance uncooled 1.55 micrometers InGaAsP/InP strained layer quantum well lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5 mA and the highest lasing temperature of 122 degree(s)C were obtained.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319615
Show Author Affiliations
Xiaoyu Ma, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
Shutang Wang, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Zhongming Wang, Institute of Semiconductors (China)
Liming Wang, Institute of Semiconductors (China)
Guangping He, Institute of Semiconductors (China)
Yali Yang, Institute of Semiconductors (China)
Hongqin Zhang, Institute of Semiconductors (China)
Xiuning Zhou, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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