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Proceedings Paper

Linewidth in microdisk laser
Author(s): Yongqiang Ning; Sheng Li Wu; Lijun Wang; Jiuling Lin; Dehui Fu; Yun Liu; Dongjiang Wu; Yixin Jin
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Paper Abstract

Among the attractive features of microcavity lasers for practical applications are the potential for reduced thresholds and the ability to design a mode structure with nearly ideal single mode operation. One of the most important parameters for semiconductor lasers is the linewidth. Generally the linewidth in semiconductor lasers is proportional to the inverse of the output power. In this work, we examine the lasing behavior of microdisk lasers, consisting of InGaP/InGaAsP/InP MQW structure, optically pumped at liquid nitrogen temperature by Ar ion laser. A decrease of threshold of the microdisk laser is observed. The linewidth of the lasing spectrum is measured at various pumping level. It turns out that the measured linewidth is broad and in the range of nanometer. The linewidth does not display the usual inverse power dependence, i.e., Schalow- Townes linewidth narrowing.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319611
Show Author Affiliations
Yongqiang Ning, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Lijun Wang, Changchun Institute of Physics (China)
Jiuling Lin, Changchun Institute of Physics (China)
Dehui Fu, Changchun Institute of Physics (China)
Yun Liu, Changchun Institute of Physics (China)
Dongjiang Wu, Changchun Institute of Physics (China)
Yixin Jin, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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