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Proceedings Paper

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities
Author(s): Dai Lun; Bei-Wei Zhang; Robin A. Mair; Kecai Zeng; Jing Yu Lin; Hongxing Jiang; Andrei Botchkarev; W. Kim; Hadis Morkoc; Muhammad Asif Khan
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Paper Abstract

Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 micrometers in diameter and regularly spaced every 50 micrometers , were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (1) the radial mode type with a spacing of 49 - 51 meV (both TE and TM) and (2) the Whispering gallery mode with a spacing of 15 - 16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

Paper Details

Date Published: 19 August 1998
PDF: 6 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319607
Show Author Affiliations
Dai Lun, Peking Univ. (China)
Bei-Wei Zhang, Peking Univ. (China)
Robin A. Mair, Kansas State Univ. (United States)
Kecai Zeng, Kansas State Univ. (United States)
Jing Yu Lin, Kansas State Univ. (United States)
Hongxing Jiang, Kansas State Univ. (United States)
Andrei Botchkarev, Virginia Commonwealth Univ. (United States)
W. Kim, Virginia Commonwealth Univ. (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)
Muhammad Asif Khan, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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