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Proceedings Paper

Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities
Author(s): Hongdong Zhao; Guangdi Shen; Tao Yin; Changhua Chen; ZunTu Xu; Peng Lian; Guo Gao; ShiMing Lin
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Paper Abstract

Based on the cavity quantum electrodynamics, the controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in a planar micro-cavity has been studied. The spontaneous emission spectra are obtained for different mirror reflectivity and cavity length when the carrier density is fixed. The results show that the spontaneous emission intensity can be enhanced by increasing the mirror reflectivity when radiation wavelength is about two times of the cavity length. The spectra can be changed by the micro- cavity structure and the quantum well parameters.

Paper Details

Date Published: 19 August 1998
PDF: 6 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319603
Show Author Affiliations
Hongdong Zhao, Beijing Polytechnic Univ. and Hebei Univ. of Technology (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Tao Yin, Beijing Polytechnic Univ. (Canada)
Changhua Chen, Beijing Polytechnic Univ. (China)
ZunTu Xu, Beijing Polytechnic Univ. (China)
Peng Lian, Beijing Polytechnic Univ. (China)
Guo Gao, Beijing Polytechnic Univ. (China)
ShiMing Lin, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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