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Proceedings Paper

Visible vertical-cavity surface-emitting laser
Author(s): Peng Cheng; Xiaoyu Ma; Junhua Gao; Xuejun Kang; Qing Cao; Hongjie Wang; Liping Luo; Chunhui Zhang; Xiuling Lu; ShiMing Lin
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Paper Abstract

We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy. We use the 8(lambda) optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain of AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05(lambda) thick (x equals 0.5 approximately 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 X 3 micrometers ) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. WE employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8 mA; the wavelength is about 670 nm.

Paper Details

Date Published: 19 August 1998
PDF: 6 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319601
Show Author Affiliations
Peng Cheng, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Junhua Gao, Institute of Semiconductors (China)
Xuejun Kang, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Liping Luo, Institute of Semiconductors (China)
Chunhui Zhang, Institute of Semiconductors (China)
Xiuling Lu, Institute of Semiconductors (China)
ShiMing Lin, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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