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Proceedings Paper

Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE
Author(s): Xin Gao; Baoxue Bo; Yi Qu; Baoshun Zhang; Yuxia Wang; Ling Wang; Lixia Yang; Xiaowei Song; Xingde Zhang
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Paper Abstract

A detailed operating characteristics of InGaAsP/GaAs separate confinement heterostructure single-quantum-well wide-stripe lasers emitting at 808 nm grown by liquid phase epitaxy is reported. The temperature dependences of the lasing wavelength (lambda) , the threshold current density Jth and differential quantum efficiency (eta) d are studied. The effects of the cavity length L on the threshold current density Jth and the differential quantum efficiency (eta) d are studied. The threshold current density Jth increases with increasing temperature T. But the increase of Jth with temperature T is slightly deviated from the exponential dependence. The data fitting of Jth with between 10 degree(s)C and 40 degree(s)C demonstrates a record characteristic temperature T0 of 218 K, indicating a minor influence of temperature on Jth.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319600
Show Author Affiliations
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Yuxia Wang, Changchun Institute of Optics and Fine Mechanics (China)
Ling Wang, Changchun Institute of Optics and Fine Mechanics (China)
Lixia Yang, Changchun Institute of Optics and Fine Mechanics (China)
Xiaowei Song, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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