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Proceedings Paper

Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode: calculation and analyses
Author(s): Hongyan Li; Hong Li; Jiawei Shi; Enshun Jin; Dingsan Gao
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Paper Abstract

In this paper, theoretical calculation results of dynamically thermal properties of high-power InGaAsP/InP stripe-geometry laser diode has been given based on the 2D thermal conduction model by means of finite difference. In this calculation, except for active layer heating due to nonradiative recombination and partial reabsorption of radiation, the radiative transfer of the spontaneous radiation through the wide-gap passive layers, the Joule heating is taken into account. At the same time, active region heat source is simplified as line heat source. Through the temperature profiles acquired by changing construction parameters and supplied power, we can see that temperature profiles have a certain relation with the construction parameters and supplied power. At last, the thermal resistance achieved by theory calculation compares with the laser diode thermal resistance achieved by measuring, the proportion of the crystal, the heat sink and the shell's thermal resistance is obtained. The calculation shows that a diamond film sandwiched between the crystal and the heat sink can improve the diode's thermal properties obviously.

Paper Details

Date Published: 19 August 1998
PDF: 7 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319599
Show Author Affiliations
Hongyan Li, Jilin Univ. (China)
Hong Li, Jilin Univ. (China)
Jiawei Shi, Jilin Univ. (China)
Enshun Jin, Jilin Univ. (China)
Dingsan Gao, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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