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Proceedings Paper

808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE
Author(s): Xin Gao; Baoxue Bo; Yi Qu; Baoshun Zhang; Ling Wang; Yuxia Wang; Lixia Yang; Xiaowei Song; Xingde Zhang
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Paper Abstract

In this work, we report Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well structures for lasers emitting at 808 nm are grown by enhanced liquid phase epitaxy. The highest continuous wave output power is 4 W for lasers with coated facts. The differential efficiency is 1.32 W/A. The record characteristic T0 of the laser is estimated to be about 218 K between 10 degree(s)C and 40 degree(s)C from the temperature dependence of the threshold current density Jth.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319598
Show Author Affiliations
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Ling Wang, Changchun Institute of Optics and Fine Mechanics (China)
Yuxia Wang, Changchun Institute of Optics and Fine Mechanics (China)
Lixia Yang, Changchun Institute of Optics and Fine Mechanics (China)
Xiaowei Song, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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