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Proceedings Paper

Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers
Author(s): Baoxue Bo; Baoshun Zhang; Xin Gao; Ling Wang; Lixia Yang; Xingde Zhang
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Paper Abstract

It was observed that a twin-lobe like farfield appeared more obviously with larger stripe width of BA LD, also with increasing injected current, due to much more complicated lateral modes. As a consequence, a single-lobed farfield output of 2.0 W has been realized with BA InGaAsP/GaAs SCH SQW lasers (stripe width 150 um).

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319597
Show Author Affiliations
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Ling Wang, Changchun Institute of Optics and Fine Mechanics (China)
Lixia Yang, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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