Share Email Print

Proceedings Paper

Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers
Author(s): Lijun Wang; Sheng Li Wu; Yun Liu; Yongqiang Ning; Jacqueline E. Diaz; Ivan Eliashevich; Hyuk Jong Yi; Manijeh Razeghi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm2, output light power 2W in continuous wave, slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T0 is 330 degree(s)K.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319596
Show Author Affiliations
Lijun Wang, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Yun Liu, Changchun Institute of Physics (China)
Yongqiang Ning, Changchun Institute of Physics (China)
Jacqueline E. Diaz, Northwestern Univ. (United States)
Ivan Eliashevich, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

© SPIE. Terms of Use
Back to Top