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Proceedings Paper

808-nm semiconductor laser Ohmic-contact technology
Author(s): Yuxia Wang; Baoshun Zhang; Ling Wang; Dacui Ren; Xingde Zhang
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Paper Abstract

In order to enhance the conversion efficiency and output power of semiconductor lasers, extend its lifetime, the contact resistance has to be reduced. This paper introduces the recent results obtained about the semiconductor laser Ohmic contact experimental study. In our work, AuZn film was evaporated on to the P side of the laser epitaxial wafer, and AuGeNi on to N side. By choosing the optimum alloying temperature of 400 degree(s)C, we obtained the lowest contact resistance. After this process, AR and HR films were sputtered on to the two facets of the laser cavity. Finally, the following results were obtained for the laser performance: central wavelength (lambda) 0 equals 808 nm, threshold current density Jth equals 300 - 470 A/cm2, CW output power P equals 3W, resistance R equals 0.06 (Omega) (for a laser stripe of 150 micrometers , cavity length of 1 mm).

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319595
Show Author Affiliations
Yuxia Wang, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Ling Wang, Changchun Institute of Optics and Fine Mechanics (China)
Dacui Ren, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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