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Proceedings Paper

1.55-μm InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication
Author(s): Yi Luo; Guo-Peng Wen; Changzheng Sun; TongNing Li; Xin-Min Yang; Ren-Fan Wang; Cai-Lin Wang; Jin-Yan Jin
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Paper Abstract

In this paper, a 1.55 micrometers InGaAsP/InP partially gain- coupled DFB laser monolithically integrated with electroabsorption modulator is fabricated for the first time. The threshold current and the extinction ratio are 40 mA and 11 dB respectively.

Paper Details

Date Published: 19 August 1998
PDF: 3 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319593
Show Author Affiliations
Yi Luo, Tsinghua Univ. (China)
Guo-Peng Wen, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
TongNing Li, Wuhan Telecommunication Devices Co. (United States)
Xin-Min Yang, Wuhan Telecommunication Devices Co. (China)
Ren-Fan Wang, Wuhan Telecommunication Devices Co. (China)
Cai-Lin Wang, Wuhan Telecommunication Devices Co. (China)
Jin-Yan Jin, Wuhan Telecommunication Devices Co. (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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