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Proceedings Paper

Picosecond optical sampling method to measure S-parameter of microwave monolithic integrated circuit
Author(s): Fuyun Lu; Shuzhong Yuan; Jiaqi Pan; Qi Gai; Yuanchao Zhao; Qingguo He
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Paper Abstract

The fundamental principles to measure S-parameter of microwave monolithic integrated circuit by photoconductive sampling technique has been reported. Photoconductive sampling technique has been used to measure the S-parameter of a wide-band low noise three-stage amplifier for the first time. The measurement results agree well with those measured by network analyzer. And a measurement band width of 100GHz has been achieved by photoconductive sampling technique.

Paper Details

Date Published: 10 August 1998
PDF: 6 pages
Proc. SPIE 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II, (10 August 1998); doi: 10.1117/12.318448
Show Author Affiliations
Fuyun Lu, Nankai Univ. (China)
Shuzhong Yuan, Nankai Univ. (China)
Jiaqi Pan, Nankai Univ. (China)
Qi Gai, Nankai Univ. (China)
Yuanchao Zhao, Nankai Univ. (China)
Qingguo He, Nankai Univ. (China)


Published in SPIE Proceedings Vol. 3558:
Automated Optical Inspection for Industry: Theory, Technology, and Applications II
Shenghua Ye, Editor(s)

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