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Proceedings Paper

Spectroellipsometric study of optical and electrical properties of buried CoSi2 layers in silicon produced by MEVVA implantation
Author(s): Wensheng Guo; Saipeng Wong; Ziqing Zhu
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Paper Abstract

Cobalt ion implantation of silicon substrate by Metal Vapor Vacuum Arc ion source has been studied by spectroscopic ellipsometry (SE) over the wavelength range of 400-2000nm. A series of annealed samples with different substrate temperatures during implantation have been investigated. From the interpretation of the ellipsometric data, the depth profiles of the samples can be derived. And the derived layer thicknesses are found to be consistent with the results of RBS and XTEM studies. At the same time, the optical properties of the buried CoSi2 layers in Si can be derived. To represent the optical properties of these buried CoSi2 layers, a three-term model is used with two classical Lorentz oscillators representing the electronic transitions, and one Drude term modeling the effect of free electrons. The derived Drude parameters can be used to calculate the optical resistivities of these buried CoSi2 layers. And the calculated optical resistivities are consistent with the dc electrical resistivities deduced from electrical measurements.

Paper Details

Date Published: 10 August 1998
PDF: 10 pages
Proc. SPIE 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II, (10 August 1998); doi: 10.1117/12.318354
Show Author Affiliations
Wensheng Guo, Sichuan Union Univ. (China)
Saipeng Wong, Chinese Univ. of Hong Kong (Hong Kong)
Ziqing Zhu, Sichuan Union Univ. (China)


Published in SPIE Proceedings Vol. 3558:
Automated Optical Inspection for Industry: Theory, Technology, and Applications II
Shenghua Ye, Editor(s)

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