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Proceedings Paper

Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
Author(s): Xiaowei Song; Yi Qu; Mei Li; Xin Gao; Xueqian Li; Xingde Zhang
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Paper Abstract

In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The sample were characterized by high-resolution photoluminescence measurements. For 8 nm single quantum well, the excitation luminescence spectra at 10 K are characterized by transitions which has a linewidth (FWHM) of 6.2 nm and large intensity, indicating abrupt GaAlAs/GaAs interface. The shift of X(e-hh) peak position versus the excitation level are also observed. The results of PL measurement show that sample quality has met the requirement of design and proven to be satisfactory.

Paper Details

Date Published: 14 August 1998
PDF: 3 pages
Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); doi: 10.1117/12.318248
Show Author Affiliations
Xiaowei Song, Changchun Institute of Optics and Fine Mechanics (China)
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Mei Li, Changchun Institute of Optics and Fine Mechanics (China)
Xin Gao, Changchun Institute of Optics and Fine Mechanics (China)
Xueqian Li, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3556:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II
Chuangtian Chen, Editor(s)

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