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Proceedings Paper

Carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure
Author(s): Guangyou Yu; Xiwu Fan; Jiying Zhang; Baojun Yang; Xiaowei Zhao; Dezheng Shen; Xianggui Kong
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Paper Abstract

Optical characteristics of ZnCdSe/ZnSe asymmetric double- quantum-well structure grown by LP-MOCVD were studied. By analyzing the photoluminescence spectra, we found that the excitation power and temperature could influence the tunneling of the excitons, and due to different tunneling time of electrons and holes, space-charge effect was observed.

Paper Details

Date Published: 14 August 1998
PDF: 4 pages
Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); doi: 10.1117/12.318247
Show Author Affiliations
Guangyou Yu, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)
Jiying Zhang, Changchun Institute of Physics (China)
Baojun Yang, Changchun Institute of Physics (China)
Xiaowei Zhao, Changchun Institute of Physics (China)
Dezheng Shen, Changchun Institute of Physics (China)
Xianggui Kong, Changchun Institute of Physics (China)


Published in SPIE Proceedings Vol. 3556:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II
Chuangtian Chen, Editor(s)

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