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Proceedings Paper

Structural characteristic of GaAIAs multi-epitaxial layer heterostructure
Author(s): Mei Li; Yi Qu; Xueqian Li; Xingde Zhang
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Paper Abstract

GaAlAs/GaAs hetero-epitaxial thin films are prepared by liquid phase epitaxy (LPE) technique. Structural characteristic of the film was Studied by X-ray double crystal rocking curve method. We have measured the rocking curve of (400) reflection and observed the interference fringes. Computer simulation of the experimental curves have been performed with kinematical and dynamical diffraction theory, respectively. We discussed the reason for the appearance of the interference fringe, and calculated structure parameters. The results obtained using dynamical theory is closer to the actual growth parameters.

Paper Details

Date Published: 14 August 1998
PDF: 4 pages
Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); doi: 10.1117/12.318245
Show Author Affiliations
Mei Li, Changchun Institute of Optics and Fine Mechanics (China)
Yi Qu, Changchun Institute of Optics and Fine Mechanics (China)
Xueqian Li, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3556:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II
Chuangtian Chen, Editor(s)

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