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Proceedings Paper

Shallow and deep impurity levels in undoped Rh- and Ce-doped photorefractive BaTiO3
Author(s): Shuoxing Dou; Hongwei Song; Mingjun Chi; Yong Zhu; Peixian Ye
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Paper Abstract

The shallow and deep impurity levels in undoped, Rh- and Ce- doped as-grown BaTiO3 crystals were investigated. We have found two shallow impurity levels in all the crystals by light-induced absorption spectrum studies, and have determined their thermal depths. We identified that one of the shallow levels has the same defect origins in al the crystals, while the other shallow level has the same defect origins in the undoped and Ce-doped crystals. Thermo-induced absorption spectra in these crystals were studied for the first time and proved to be a useful method for observing the absorption peaks of deep impurity levels in photorefractive crystals. The thermal depths of the deep levels in these crystals were determined by studies of grating dark-decay. The thermal levels and corresponding optical transitions in the crystals were given.

Paper Details

Date Published: 17 August 1998
PDF: 9 pages
Proc. SPIE 3554, Photorefractive Materials: Phenomena and Related Applications II, (17 August 1998); doi: 10.1117/12.318106
Show Author Affiliations
Shuoxing Dou, Institute of Physics and Ctr. for Condensed Matter Physics (China)
Hongwei Song, Institute of Physics and Ctr. for Condensed Matter Physics (China)
Mingjun Chi, Institute of Physics and Ctr. for Condensed Matter Physics (China)
Yong Zhu, Institute of Physics and Ctr. for Condensed Matter Physics (China)
Peixian Ye, Institute of Physics and Ctr. for Condensed Matter Physics (China)


Published in SPIE Proceedings Vol. 3554:
Photorefractive Materials: Phenomena and Related Applications II
Peixian Ye; Tsutomu Shimura; Ratnakar R. Neurgaonkar, Editor(s)

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