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Proceedings Paper

Deep levels in Hg1-xCdxTe using mobility and carrier concentration
Author(s): Xiangyang Li; Xinwen Hu; Huiqin Lu; Jun Zhao; Jiaxiong Fang
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Paper Abstract

A new method of studying the deep levels in Hg1-xCdxTe was proposed. Through analyzing the relation between mobility and temperature and that between carrier concentration and temperature, we obtained some important information about deep levels. First, the Fermi level was calculated from the measured electron concentration by using the Kane's band model. Then the hole concentration was obtained from this Fermi level. Compared with the electron concentration calculated by the electrical neutrality equation, the measured one had the contribution from the deep level at the temperature range of about 200K. The electron mobility was also theoretically calculated. Deep level's contribution to the measured electron mobility was also discussed. Finally, a two levels model, and a fitting method as well, was proposed.

Paper Details

Date Published: 11 August 1998
PDF: 6 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318104
Show Author Affiliations
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Xinwen Hu, Shanghai Institute of Technical Physics (China)
Huiqin Lu, Shanghai Institute of Technical Physics (China)
Jun Zhao, Shanghai Institute of Technical Physics (United States)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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