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Proceedings Paper

MBE growth of HgCdTe for infrared focal plane arrays
Author(s): Li He; Jianrong Yang; Shanli Wang; Meifang Yu; Yanq Wu; Yimin Qiao; Xinqiang Chen; Weizheng Fang; Qingyao Zhang; Yongsheng Gui; Junhao Chu
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Paper Abstract

The recent progress in MBE growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is described. It was found that the surface morphology is sensitive to the growth temperature and the flux ratio. The compositional reproducibility studied in a limited number of samples showed that a STDDEV for x-values of 0.0017 deviated from an average value of 0.229 was obtained. The epilayers showed excellent compositional uniformity across 2-inch wafers, the relative deviations for x-value and thickness were found to be 0.18 percent and 2.19 percent respectively. Ellipsometer was used for real-time monitoring the compositional variations during growth. The post growth annealing process was found to be effective in reducing the dislocation density, a reduction in dislocation density by approximately 50 percent could be obtained even by approximately 250 degrees C low temperature annealing. Electrical properties of epilayers are described, and a p-type in situ vacuum annealing process was demonstrated. MBE grown p-HgCdTe epilayers were successfully incorporated into 32 X 32 focal plane arrays detectors.

Paper Details

Date Published: 11 August 1998
PDF: 10 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318080
Show Author Affiliations
Li He, Shanghai Institute of Technical Physics (China)
Jianrong Yang, Shanghai Institute of Technical Physics (China)
Shanli Wang, Shanghai Institute of Technical Physics (China)
Meifang Yu, Shanghai Institute of Technical Physics (China)
Yanq Wu, Shanghai Institute of Technical Physics (China)
Yimin Qiao, Shanghai Institute of Technical Physics (China)
Xinqiang Chen, Shanghai Institute of Technical Physics (China)
Weizheng Fang, Shanghai Institute of Technical Physics (China)
Qingyao Zhang, Shanghai Institute of Technical Physics (China)
Yongsheng Gui, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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