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Proceedings Paper

Compatability of P+-GexSi1-x/p-Si heterojunction internal photoemission infrared detector with its monolithically integrated MOS readout switch
Author(s): Ruizhong Wang; Peiyi Chen; Peihsin Tsien; Yongkang Li; Junming Zhou
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Paper Abstract

In this paper, the compatibility of P+-GexSi1-x/p-Si heterojunction internal photoemission IR detector (HIP IRD) with its CMOS readout circuit is analyzed with a feasible approach presented. The experimental chip in which P+-GexSi1-x/p-Si HIP IRD and its NMOS readout switch are monolithically integrated has been fabricated with a 3 micrometers NMOS technology. The MBE grown detector without the dielectric cavity and anti-reflecting layer has a blackbody detectivity D*(500, 1000, 1) of 1.1 X 109cmHz1/2/W at the temperature of 77K. The selective readout of the output signals of the detectors through the NMOS readout switch at 77K has been achieved. Therefore, the feasibility of fabricating monolithically integrated P+-GexSi1-x/p-Si HIP IR focal plane array with NMOS readout circuit was demonstrated preliminarily.

Paper Details

Date Published: 11 August 1998
PDF: 8 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318064
Show Author Affiliations
Ruizhong Wang, Tsinghua Univ. (China)
Peiyi Chen, Tsinghua Univ. (China)
Peihsin Tsien, Tsinghua Univ. (China)
Yongkang Li, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)


Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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